Electron beam lithography (EBL) and laser beam lithography (LBL) systems

University of Jyväskylä (JYU) is inviting tenders for a combination of an electron beam lithography system (EBL) and a laser beam lithography system (LBL), both capable of mix-and-match processing based on CAD drawings in GDSII file format. We are searching a Dedicated EBL tool AND a Dedicated LBL tool for research and development of state of the art micro- and nano-scale features requiring high fidelity in patterning and edge smoothness. Contracting authority has a need for high precision and versatile lithography tools for patterning of optical wave guides and lattices, phononic crystals and mechanic resonators; with the goal of investigating quantum phenomena and the interplay between such structures. Contracting authority has a need for the lithography tools to support integration of high fidelity nano-scale features into considerably larger designs, such as microfluidic networks with widths of about 100 um and lengths of several mm. Therefore, contracting authority puts emphasis on the two lithography systems having good support for mix-and-match lithography, i.e. well documented procedures for sharing CAD pattern libraries for straightforward implementation in mix-and-match exposures on the same resist layer. The EBL and LBL systems should manage mix-and-match exposures with resists such as Shipley S1813, SU-8 and AZ5200-E series., EBL system A Dedicated EBL tool for fabrication of state of the art nano-scale structures. Contracting authority has a need for high precision and versatile tool which would be extremely useful in preparation of phononic and photonic structures, such as waveguides, gratings and meta-plasmonic structures. The EBL system should have good support for mix-and-match lithography, i.e. well documented procedures for sharing CAD pattern libraries for straightforward implementation in mix-and-match exposures with the LBL system in lot 2., LBL system A laser beam lithography system (LBL) for advanced microfabrication of semiconductor and biomedical devices. The system will be installed in a clean-room facility of class iso 5, forming part of a larger lithography research line. The system must meet high performance specifications for resolution. The system is intended for exposure of photoresists where suitable exposure wavelength is 375 nm. The majority of processing will occur on chips sized from 5 mm by 5 mm up to standard 4 inch diameter wafers, however we require that up to 5 x 5 inch substrates can fit into the system. The LBL system should have good support for mix-and-match lithography, i.e. well documented procedures for sharing CAD pattern libraries for straightforward implementation in mix-and-match exposures with the EBL system in lot 1. The system needs to be installed by the supplier.,